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SP8K64
Transistors
4V Drive Nch+Nch MOSFET
SP8K64
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
SOP8
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Switching
Each lead has same dimensions
Packaging specifications
Package Type SP8K64 Code Basic ordering unit (pieces) Taping TB 2500
Equivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
2
2
(1) (2) (3) (4)
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
1
1
(1)
(2)
(3)
(4)
1 ESD PROTECTION DIODE 2 BODY DIODE
A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature
1 Pw 10s, Duty cycle 1% 2 Mounted on a ceramic board.
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD Tch Tstg
2
Limits 30 20 9 36 1.6 36 2.0 1.4 150 -55 to +150
Unit V V A A A A W/TOTAL W/ELEMENT C C
1/4
SP8K64
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd
Min. - 30 - 1.0 - - - 6.5 - - - - - - - - - -
Typ. - - - - 14 17 18 - 1600 230 190 15 40 60 75 15.0 4.0 4.4
Max. 10 - 1 2.5 19 23 24.5 - - - - - - - - 22.5 - -
Unit A V A V m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=9A, VGS=10V ID=9A, VGS=4.5V ID=9A, VGS=4.0V ID=9A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.5A, VDD 15V VGS=10V RL=3.33 RG =10 ID=9A, VDD 15V VGS=5V RL=1.67, RG =10
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions IS=9A, VGS=0V
2/4
SP8K64
Transistors
Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
100 VDS=10V Pulsed
100 Ta=25C Pulsed
1000 VGS=10V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
DRAIN CURRENT : ID (A)
10
1
Ta=125C Ta=75C Ta=25C Ta= -25C
100
0.1
VGS=4.0V VGS=4.5V VGS=10V
10
0.01
0.001 1.0
1.5
2.0
2.5
3.0
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current( I )
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
1000 VGS=4.5V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
1000 VGS=4V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
100 90 80 70 ID=4.5A 60 50 40 30 20 10 0 0 5 10 15 ID=9A Ta=25C Pulsed
100
100
10
10
1 0.01
0.1
1
10
100
1 0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( )
Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
FORWARD TRANSFER ADMITTANCE : Yfs (S)
100 VDS=10V Pulsed
Ta= -25C Ta=25C Ta=75C Ta=125C
10000
SWITCHING TIME : t (ns)
Ta=25C f=1MHz VGS=0V
10000
CAPACITANCE : C (pF)
1000
10
Ta=25C VDD=15V VGS=10V RG=10 Pulsed
tf
100
Ciss
1000
td (off) td (on)
1
10
tr
1 0.01
0.1 0.01
0.1
1
10
100
100 0.01
Coss Crss
0.1 1 10 100
0.1
1
10
100
DRAIN CURRENT : ID (A)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
Fig.7 Forward Transfer Admittance vs. Drain Current
Fig.8 Typical Capacitance vs. Drain-Source Voltage
Fig.9 Switching Characteristics
3/4
SP8K64
Transistors
10
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE CURRENT : IS (A)
Ta=25C VDD=15V ID=8A RG=10 Pulsed
100 VGS=0V Pulsed 10
Ta=125C Ta=75C Ta=25C Ta= -25C
5
1
0.1
0
0
5
10
15
20
25
30
35
40
0.01 0.0
0.5
1.0
1.5
TOTAL GATE CHARGE : Qg (nC)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Dynamic Input Characteristics
Fig.11 Source Current vs. Source-Drain Voltage
Measurement circuit
Pulse Width
VGS
ID RL D.U.T.
VDS
VGS VDS 50% 10% 10%
90%
50% 10%
RG VDD
td(on) ton 90% tr td(off) toff 90% tr
Fig.12 Switching Time Test Circuit
Fig.13 Switching Time Waveforms
VG
VGS
ID RL
VDS
VGS Qgs
Qg
IG (Const.) D.U.T. RG VDD
Qgd
Charge
Fig.14 Gate Charge Test Circuit
Fig.15 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0

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